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10A 100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies

Categories Mosfet Power Transistor
Brand Name: Hua Xuan Yang
Model Number: AP10N10DY
Certification: RoHS、SGS
Place of Origin: ShenZhen China
MOQ: Negotiation
Price: Negotiated
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Boxed
Product name: Mosfet Power Transistor
Model: AP10N10DY
Pack: TO-252-3
Marking: AP10N10D XXX YYYY
VDSDrain-Source Voltage: 100V
VGSGate-Sou rce Voltage: ±20A
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    10A 100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies

    10A 100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies


    Mosfet Power Transistor Description:


    The AP10N10D/Y uses advanced trench technology and
    design to provide excellent RDS(ON) with low gate charge.
    It can be used in a wide variety of applications.


    Mosfet Power Transistor Features


    VDS = 100V,ID = 10A
    RDS(ON) <160mΩ @ VGS=10V (Typ:140mΩ)
    RDS(ON) <170mΩ @ VGS=4.5V (Typ:160mΩ)
    High density cell design for ultra low Rdson
    Fully characterized avalanche voltage and current
    Excellent package for good heat dissipation


    Mosfet Power Transistor Application


    Power switching application
    Hard switched and high frequency circuits
    Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP10N10DTO-252-3AP10N10D XXX YYYY2500
    AP10N10YTO-251-3AP10N10Y XXX YYYY4000

    Absolute Maximum Ratings (T A=25unless otherwise noted)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS100V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID10A
    Drain Current-Pulsed (Note 1)IDM20A
    Maximum Power DissipationPD40W
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 175
    Thermal Resistance,Junction-to-Case (Note 2)RθJC3.75℃/W

    Electrical Characteristics (TA=25unless otherwise noted)


    ParameterSymbolConditionMinTypMaxUnit
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA100--V
    Zero Gate Voltage Drain CurrentIDSSVDS=100V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±12V,VDS=0V--±100nA
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=250 μA1.02.5V

    Drain-Source On-State Resistance


    RDS(ON)

    VGS=10V, ID=3A-140160

    mΩ

    VGS=4.5V, ID=3A-160170
    Forward TransconductancegFSVDS=5V,ID=3A-5-S
    Input CapacitanceClss

    VDS=50V,VGS=0V, F=1.0MHz

    -650-PF
    Output CapacitanceCoss-25-PF
    Reverse Transfer CapacitanceCrss-20-PF
    Turn-on Delay Timetd(on)-6-nS
    Turn-on Rise Time

    r

    t

    -4-nS
    Turn-Off Delay Timetd(off)-20-nS
    Turn-Off Fall Time

    f

    t

    -4-nS
    Total Gate ChargeQg

    VDS=50V,ID=3A,

    -20.6nC
    Gate-Source ChargeQgs-2.1-nC
    Gate-Drain ChargeQgd-3.3-nC
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=3A--1.2V
    Diode Forward Current (Note 2)

    S

    I

    --7A
    ParameterSymbolConditionMinTypMaxUnit
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA100--V
    Zero Gate Voltage Drain CurrentIDSSVDS=100V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±12V,VDS=0V--±100nA
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=250 μA1.02.5V

    Drain-Source On-State Resistance


    RDS(ON)

    VGS=10V, ID=3A-140160

    mΩ

    VGS=4.5V, ID=3A-160170
    Forward TransconductancegFSVDS=5V,ID=3A-5-S
    Input CapacitanceClss

    VDS=50V,VGS=0V, F=1.0MHz

    -650-PF
    Output CapacitanceCoss-25-PF
    Reverse Transfer CapacitanceCrss-20-PF
    Turn-on Delay Timetd(on)VDD=50V, RL=19Ω
    VGS=10V,RG=3Ω
    -6-nS
    Turn-on Rise Time

    r

    t

    -4-nS
    Turn-Off Delay Timetd(off)-20-nS
    Turn-Off Fall Time

    f

    t

    -4-nS
    Total Gate ChargeQg

    VDS=50V,ID=3A,

    -20.6nC
    Gate-Source ChargeQgs-2.1-nC
    Gate-Drain ChargeQgd-3.3-nC
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=3A VGS=10V--1.2V
    Diode Forward Current (Note 2)

    S

    I

    --7A

    Notes:


    1. Repetitive Rating: Pulse width limited by maximum junction temperature.

    2. Surface Mounted on FR4 Board, t ≤ 10 sec.

    3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

    4. Guaranteed by design, not subject to production


    Attention


    1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

    2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

    3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

    4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

    5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

    6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

    7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

    8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.


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