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6 inch 4H-N SiC wafer substrate Silicon Carbide wafer

Categories Homray Material Technology
Brand Name: Homray Material Technology
Model Number: 6 inch
Place of Origin: China
MOQ: 1
Payment Terms: T/T
Material: silicon carbide
Application: semiconductor
Dimension: 6 inch
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    6 inch 4H-N SiC wafer substrate Silicon Carbide wafer

    Homray Material Technology provide high quality silicon carbide wafer to electronic and optoelectronic industry. Silicon carbide wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , silicon carbide wafer is more suitable for high temperature and high power device. Silicon carbide wafer can be supplied in diameter 2 inch,3 inch,4inch,6inch , both 4-H-N or 6-H-N or 4/6H-Si.

    Homray Material Technology offers silicon carbide wafers in different grades.

    Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alternative for research and development and for process trials.

    Product Tags:

    ceramic substrates from al2o3

    Quality 6 inch 4H-N SiC wafer substrate Silicon Carbide wafer for sale
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