NCP81111MNI3TXG onsemi

Here is the English description of the NCP81111MNI3TXG chip:

• Function: High-Voltage N-Channel MOSFET
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 11A
• On-Resistance: 65mΩ (max)
• Operating Temperature: -55°C to 150°C
• Package: TO-220F-3

The NCP81111MNI3TXG from ON Semiconductor is a high-voltage n-channel MOSFET.

Key Features:

• Handles continuous current up to 11A
• Extended breakdown voltage of 100V
• Proven low 65mΩ maximum RDS(on) for conduction loss
• Wide -55°C to 150°C operating temperature range
• Rugged TO-220F-3 package for robust operation

Common Applications:

• Off-line power supplies and DC-DC converters
• Motor controller and industrial drive circuits
• Power factor correction and lamp ballast designs

Benefits Include:

• Enables efficient switching at higher voltages up to 100V
• Reliable high current handling of 11A continuous
• Durable package suitable for industrial environments

Well-suited for high voltage power conversion and motor control applications requiring reliable 11A switching over broad operating conditions.

In summary, the NCP81111MNI3TXG combines high voltage, current and temperature performance in a proven TO-220 package.

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We have a wide range of products that cater to various industries, including automotive, consumer electronics, telecommunications, and more. Our products are designed to meet the highest industry standards and are rigorously tested to ensure their reliability and performance.