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Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um

Categories Indium Phosphide Wafer
Brand Name: ZMSH
Model Number: Indium Phosphide Wafer
Certification: ROHS
Place of Origin: China
MOQ: 5pcs
Price: USD
Payment Terms: T/T
Delivery Time: In 15 days
Packaging Details: Customized Box
Product Name: InP substrates
Bow & Warp: ≤10μm
Material: Indium Phosphide Wafer
Orientation: 100+/-0.05 degree
Surface Finish: Double Side Polished
Surface Roughness: Ra≤0.6nm
TTV: ≤6μm
Wafer Diameter: 2 inch 3inch 4inch
Wafer Thickness: 350um 500um 625um
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Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' 4'' Thickness 350um

Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' Thickness 350um


Description of Indium Phosphide:


Indium Phosphide (InP) chips are a widely used material in optoelectronics and semiconductor devices. It has the following advantages:


  • High electron mobility: Indium phosphide chips have a high electron mobility, which means that electrons move faster through the material.

  • Controlled material properties: The properties of indium phosphide wafers can be regulated by controlling the epitaxial growth process of the material and doping techniques.

  • Wide band gap: The indium phosphide wafer has a wide band gap, enabling it to operate in the visible and infrared light ranges.

  • High saturation drift speed: The indium phosphide wafer has a high saturation drift speed, which means that the electron drift speed reaches the maximum under a high electric field.

  • Excellent thermal conductivity: The indium phosphide wafer has a high thermal conductivity, which means that it is able to efficiently conduct and dissipate heat, thereby improving the reliability and performance stability of the device.

Features of Indium Phosphide:


Indium Phosphide (InP) chips have some remarkable characteristics that make them widely used in optoelectronics and semiconductors. The following are some of the main characteristics of indium phosphide chip materials:


  • Direct band gap: Indium phosphide has a direct band gap characteristic that makes it excellent in optical devices.

  • Wide band gap range: Indium phosphide has a wide band gap ranging from infrared to ultraviolet spectrum.

  • High electron mobility: Indium phosphide has a high electron mobility, which makes it excellent in high-frequency electronics and high-speed optoelectronics.

  • Excellent thermal conductivity: Indium phosphide has a high thermal conductivity and can effectively dissipate heat.

  • Good mechanical and chemical stability: Indium phosphide chips have good mechanical and chemical stability and can maintain stability and reliability under different environmental conditions.

  • Adjustable band structure: The band structure of indium phosphide materials can be regulated by doping and alloying techniques to meet the requirements of different devices.

Technical Parameters of Indium Phosphide:


Item

Parameter

UOM

Material

InP


Conduction type/Dopant

S-C-N/S


Grade

Dummy


Diameter

100.0+/-0.3

mm

Orientation

(100) +/-0.5°


Lamellar twin area

useful single crystal area with (100) orienation > 80%


Primary Flat Orientation

EJ(0-1-1)

mm

Primary Flat Length

32.5+/-1


Secondary Flat Orientation

EJ(0-11)


Secondary Flat Length

18+/-1



Applications of Indium Phosphide:


Indium Phosphide (InP) wafers have a wide range of applications in optoelectronics and semiconductor substrates:


  • Optical communication: InP wafers are widely used in the field of optical communication for high-speed optical fiber communication systems. They are used to fabricate devices such as lasers, optical modulators, optical receivers, optical amplifiers and optical fiber couplers.

  • Photoelectronic devices: InP wafers are used to make photoelectronic devices such as photodiodes, photodetectors, solar cells and photocouplers.

  • High-speed electronic devices: InP substrates are widely used in the field of high-frequency electronic devices. In particular, InP wafes' high electron mobility transistors (HEMTs) are used to prepare devices such as high-frequency amplifiers, RF switches and microwave integrated circuits for applications such as wireless communications, radar systems and satellite communications.

  • Integrated optical devices: InP wafers are used to prepare integrated optical devices such as optical waveguides, optical modulators, optical switches and optical amplifiers.

  • Photonics research: InP wafers play an important role in photonics research. They are used in laboratory research, quantum optics, quantum information processing and optical quantum devices.

  • In addition to the above applications, InP wafers are also used in other fields, such as optical sensing, biomedicine, light storage and semiconductor substrates


FAQ:


Q1: What brand name is the InP wafer?
A1: The
InP wafer is made by ZMSH.


Q2: What's the diameter of the InP wafer?
A2: The diameter of
InP wafer is 2'', 3'', 4''.


Q3: Where is the InP wafer from?
A3: The
InP wafer is from China.


Q4: Is the InP wafer ROHS certified?
A4: Yes, the
InP wafer is ROHS certified.


Q5: How many InP wafes can I buy at 1 time?
A5: The minimum order quantity of the
InP wafer is 5pcs.


Other products:


Silicon wafers


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