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Categories IC Transistor
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 150 A
Collector- Emitter Voltage VCEO Max :: 1200 V
Pd - Power Dissipation :: 750 W
Maximum Operating Temperature :: + 150 C
Collector-Emitter Saturation Voltage :: 2.1 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules IGBT Module 150A 1700V
Stock: In Stock
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FS150R12KT4_B9

The FS150R12KT4_B9,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

FW82371EB(SL37M)

  

M29F010B70K6T

  

FW82371EB SL37M

  
Quality FS150R12KT4_B9 for sale
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