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FF600R12IP4

Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 600 A
Pd - Power Dissipation :: 3.35 kW
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: PRIME2
Maximum Operating Temperature :: + 150 C
Configuration :: Dual
Collector-Emitter Saturation Voltage :: 2.1 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules N-CH 1.2KV 600A
Stock: In Stock
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FF600R12IP4

The FF600R12IP4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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L584

  

a694 f65

  

FV524RX366

  
Quality FF600R12IP4 for sale
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