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Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 1390 A
Pd - Power Dissipation :: 6.25 kW
Collector- Emitter Voltage VCEO Max :: 1700 V
Package / Case :: PRIME3
Maximum Operating Temperature :: + 150 C
Configuration :: Dual
Collector-Emitter Saturation Voltage :: 2.45 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules N-CH 1.7KV 1.39KA
Stock: In Stock
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FF1000R17IE4

The FF1000R17IE4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

F036

  

FW82443DX

  

FW82443BX

  
Quality FF1000R17IE4 for sale
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