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ATF-511P8-TR1

Categories RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage :: - 5 V to 1 V
Technology :: GaAs
Product Category :: RF JFET Transistors
Mounting Style :: SMD/SMT
Gain :: 14.8 dB
Transistor Type :: EpHEMT
Pd - Power Dissipation :: 3 W
Package / Case :: LPCC-8
Maximum Operating Temperature :: + 150 C
Vds - Drain-Source Breakdown Voltage :: 7 V
Packaging :: Reel
Maximum Drain Gate Voltage :: - 5 V to + 1 V
Id - Continuous Drain Current :: 1 A
Manufacturer :: Avago / Broadcom
Description: RF JFET Transistors Transistor GaAs High Linearity
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ATF-511P8-TR1

The ATF-511P8-TR1,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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