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PTFB193404F V1

Categories RF MOSFET Transistors
Transistor Polarity :: N-Channel
Technology :: Si
Product Category :: RF MOSFET Transistors
Mounting Style :: SMD/SMT
Gain :: 19 dB
Output Power :: 100 W
Package / Case :: H-37275-6-2
Maximum Operating Temperature :: + 150 C
Vds - Drain-Source Breakdown Voltage :: 65 V
Packaging :: Tray
Id - Continuous Drain Current :: 2.6 A
Manufacturer :: Infineon Technologies
Description: RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MHz
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PTFB193404F V1

The PTFB193404F V1,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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