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| Categories | Electronic IC Chips |
|---|---|
| Model Number: | P10NK80ZFP |
| Certification: | new & original |
| Place of Origin: | original factory |
| MOQ: | 10pcs |
| Price: | Negotiate |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 8500pcs |
| Delivery Time: | 1 day |
| Packaging Details: | Please contact me for details |
| Description: | N-Channel 800 V 9A (Tc) 40W (Tc) Through Hole TO-220FP |
| Drain-source Voltage (VGS = 0): | 800 V |
| Drain-gate Voltage (RGS = 20 kΩ): | 800 V |
| Gate- source Voltage: | ± 30 V |
| Gate source ESD(HBM-C=100pF, R=1.5KΩ): | 4 KV |
| Peak Diode Recovery voltage slope: | 4.5 V/ns |
| Operating Junction Temperature: | -55 to 150 °C |
STP10NK80Z - STP10NK80ZFP STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
| TYPE | VDSS | RDS(on) | ID | Pw |
STP10NK80Z STP10NK80ZFP STW10NK80Z | 800 V 800 V 800 V | < 0.90 Ω < 0.90 Ω < 0.90 Ω | 9 A 9 A 9 A | 160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP10NK80Z | STP10NK80ZFP | STW10NK80Z | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
| ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
| IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
| PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
| Derating Factor | 1.28 | 0.32 | 1.28 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C °C | ||
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed.
Stock Offer (Hot Sell)
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