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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Categories Electronic IC Chips
Model Number: P4NK60ZFP
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8760pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-220FP
Drain-source Voltage: 600 V
Drain-gate Voltage: 600 V
Gate- source Voltage: ± 30 V
Peak Diode Recovery voltage slope: 4.5 V/ns
Insulation Withstand Voltage: 2500 V
Operating Junction Temperature: -55 to 150 °C
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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors


Stock Offer (Hot Sell)

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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

STB4NK60Z-STD4NK60Z-STD4NK60Z-1


N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET


■ TYPICAL RDS(on) = 1.76 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY


DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.


APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■ LIGHTING


ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit

STP4NK60Z

STB4NK60Z

STB4NK60Z-1

STP4NK60ZFP

STD4NK60Z

STD4NK60Z-1

VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C44 (*)4A
IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
IDM (•)Drain Current (pulsed)1616 (*)16A
PTOTTotal Dissipation at TC = 25°C702570W
Derating Factor0.560.20.56W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area

(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed


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