Configuration Single IGBT Modules 1200V 150A FD150R12RT4HOSA1 SP000711858

FD150R12RT4HOSA1 SP000711858 Infineon IGBT Module IGBT 1200V 150A

FD150R12RT4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Single
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 2.15 V
Continuous collector current at 25 C: 150 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 790 W
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Installation style: SMD/SMT
Series: Trench/Fieldstop IGBT4
Packing Quantity: 10 PCS
Subcategory: IGBTs

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