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CSD18540Q5B RF Power Mosfet Transistors , N Channel Mosfet Circuit NexFET Pwr MOSFET

Categories	Flash Memory IC Chip
Brand Name:	Ti
Model Number:	CSD18540Q5B
MOQ:	Contact us
Price:	Contact us
Payment Terms:	Paypal, Western Union, TT
Supply Ability:	50000 Pieces per Day
Delivery Time:	The goods will be shipped within 3 days once received fund
Packaging Details:	VSON8
Description:	MOSFET N-CH 60V 100A 8VSON
Channel Mode:	Enhancement
Configuration:	Single
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	2.2 mOhms
2.2 mOhms:	100 A

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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CSD18540Q5B Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET

1 Features

2 Applications

3 Description

This 1.8-mΩ, 60-V NexFETTM power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	60		V
Qg	Gate Charge Total (10 V)	41		nC
Qgd	Gate Charge Gate-to-Drain	6.7		nC
RDS(on)	Drain-to-Source On Resistance	VGS = 4.5 V	2.6	mΩ
		VGS =10V	1.8
VGS(th)	Threshold Voltage	1.9		V

Device Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	60	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), TC = 25°C	205
	Continuous Drain Current(1)	29
IDM	Pulsed Drain Current, TA = 25°C(2)	400	A
PD	Power Dissipation(1)	3.8	W
PD	Power Dissipation, TC = 25°C	188	W
TJ, Tstg	Operating Junction, Storage Temperature	–55 to 175	°C
EAS	Avalanche Energy, Single Pulse ID =80A,L=0.1mH,RG =25Ω	320	mJ

Product Tags:

p channel mosfet driver circuit

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