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| Categories | Flash Memory IC Chip |
|---|---|
| Brand Name: | Ti |
| Model Number: | SI7139DP-T1-GE3 |
| MOQ: | Contact us |
| Price: | Contact us |
| Payment Terms: | Paypal, Western Union, TT |
| Supply Ability: | 50000 Pieces per Day |
| Delivery Time: | The goods will be shipped within 3 days once received fund |
| Packaging Details: | SOT223 |
| Description: | MOSFET P-CH 60V 8.6A PPAK SO-8 |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Id - Continuous Drain Current: | 14.4 A |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | 10 V |
| Qg - Gate Charge: | 121 nC |
| Pd - Power Dissipation: | 5.4 W |
SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
FEATURES
for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY | ||
VDS (V) | RDS(on) () | ID (A) |
-60 | 0.0145 at VGS = -10 V | -14.4 |
0.0190 at VGS = -4.5 V | -12.6 | |
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | |||||
PARAMETER | SYMBOL | 10 s | STEADY STATE | UNIT | |
Drain-Source Voltage | VDS | -60 | V | ||
Gate-Source Voltage | VGS | ± 20 | |||
Continuous Drain Current (TJ = 150 °C) a | TA =25°C | ID | -14.4 | -8.6 | A |
TA =70°C | -11.5 | -6.9 | |||
Pulsed Drain Current | IDM | -60 | |||
Continuous Source Current (Diode Conduction) a | IS | -4.5 | -1.6 | ||
Avalanche Current | L = 0.1 mH | IAS | 50 | ||
Single Pulse Avalanche Energy | EAS | 125 | mJ | ||
Maximum Power Dissipation a | TA =25°C | PD | 5.4 | 1.9 | W |
TA =70°C | 3.4 | 1.2 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C | ||
Soldering Recommendations (Peak Temperature) b, c | 260 | ||||
THERMAL RESISTANCE RATINGS | |||||
PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT | |
Maximum Junction-to-Ambient a | t 10 s | RthJA | 18 | 23 | °C/W |
Steady State | 52 | 65 | |||
Maximum Junction-to-Case (Drain) | Steady State | RthJC | 1 | 1.3 | |
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