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CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

Categories	Flash Memory IC Chip
Brand Name:	Ti
Model Number:	CSD17556Q5B
MOQ:	Contact us
Price:	Contact us
Payment Terms:	Paypal, Western Union, TT
Supply Ability:	50000 Pieces per Day
Delivery Time:	The goods will be shipped within 3 days once received fund
Packaging Details:	VSON-8
Description:	MOSFET N-CH 30V 34A/100A 8VSON
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Configuration:	Single
Height:	1 mm
LeCM GROUPh:	6 mm

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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Product Details
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CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

1 Features

Extremely Low Resistance
Ultra-Low Qg and Qgd
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

2 Applications

Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications

3 Description

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	30		nC
Qgd	Gate Charge Gate-to-Drain	7.5		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	1.5	mΩ
		VGS =10V	1.2
VGS(th)	Threshold Voltage	1.4		V

Device Information

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD17556Q5B	2500	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel
CSD17556Q5BT	250	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), TC = 25°C	215
	Continuous Drain Current(1)	34
IDM	Pulsed Drain Current, TA = 25°C(1)(2)	400	A
PD	Power Dissipation(1)	3.1	W
PD	Power Dissipation, TC = 25°C	191	W
TJ, Tstg	Operating Junction, Storage Temperature	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse ID =100A,L=0.1mH,RG =25Ω	500	mJ

Product Tags:

mosfet motor control circuit

n channel mos field effect transistor

CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

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