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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Categories Electronic IC Chips
Brand Name: FAIRCHILD
Model Number: FDP085N10A
Certification: Original Factory Pack
Place of Origin: America
MOQ: 5pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5600PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
Description: N-Channel 100 V 96A (Tc) 188W (Tc) Through Hole TO-220-3
Drain to Source Voltage: 100V
Single Pulsed Avalanche Energy: 269mJ
Peak Diode Recovery dv/dt: 6.0V/ns
Operating and Storage Temperature Range: -55 to +175°C
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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Features

• RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

Thermal Characteristics​

SymbolParameterRatingsUnits
RθJCThermal Resistance, Junction to Case0.8°C/W
RθJAThermal Resistance, Junction to Ambient62.5°C/W


Typical Performance Characteristics


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Quality FDP085N10A  N-Channel PowerTrench  MOSFET High Power Mosfet Transistors for sale
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