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4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3

Categories Sapphire Substrate
Brand Name: ZMSH
Model Number: 4INCH*0.5mmt
Certification: ROHS
Place of Origin: China
MOQ: 25pcs
Price: by case
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1000pcs per month
Delivery Time: 1 weeks
Packaging Details: in 25pcs cassette wafer box under 100grade cleaning room
material: sapphire single crystal Al2O3 99.999%
orientation: C-AXIS/A-AXIS/M-AXIS/M-AXIS
surface: SSP DSP or Grinding
thickness: 0.17mm, 0.5mm or other
application: led or optical glass
growth method: ky
SIZE: 4inch DIA100mm
Package: 25/Cassette
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4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3

4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3

About synthetic sapphire crystal

Sapphire is a single crystal of alumina and is the second-hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance, and high temperature and high-pressure resistance, biocompatibility is an ideal substrate material for the production of semiconductor optoelectronic devices, the electrical properties of sapphire make it become the substrate material for the production of the white and blue LED.

Our company's long-term production thickness ≧0.1mm, and its shape size ≧Φ2" high precision sapphire wafer. In addition to the conventional Φ2 ", Φ4 ", Φ6 ", Φ8 ", Φ10 ", Φ12 " and other sizes can be customized, please contact our sales staff.

The sapphire (Al₂O) ₃ substrate is a kind of material for LED chips. Due to its high stability, sapphire ₃ is suitable for high-temperature growth. Finally, sapphire is mechanically strong and easy to handle and clean. Therefore, sapphire is generally used as a substrate for most processes.

Sapphire Properties

Physical
Chemical formulaAl2O3
Density3.97 g/cm3
Hardness9 Mohs
Melting point2050oC
Max. use temperature1800-1900oC
Mechanical
Tensile strength250-400 MPa
Compressive strength2000 MPa
Poisson's ratio0.25-0.30
Young's Modulus350-400 GPa
Bending strength450-860 MPa
Rapture Modulus350-690 MPa
Thermal
Linear expansion rate (at 293-323 K)5.0*10-6K-1(⊥ C)
6.6*10-6K-1(∥ C)
Thermal conductivity (at 298 K)30.3 W/(m*K)(⊥ C)
32.5 W/(m*K)(∥ C)
Specific heat (at 298 K)0.10 cal*g-1
Electrical
Resistivity (at 298 K)5.0*1018 Ω*cm(⊥ C)
1.3-2.9*1019 Ω*cm(∥ C)
Dielectric constant (at 298 K, in 103-109 Hz interval)9.3 (⊥ C)
11.5 (∥ C)

Synthetic sapphire is a transparent single crystal 99.99% pure Al2O3 that exhibits a unique combination of physical, chemical, electrical and optical properties: high thermal conductivity, high strength, scratch resistance, hardness (9 on the Mohs scale), transparent in a wide range of wavelength, chemical inertness.
High crystal perfection, low reactivity, and appropriate unit cell size make sapphire an excellent substrate in the semiconductor industry for blue light-emitting diodes (LED).
Since Nobel Laureate in Physics Shuji Nakamura used the sapphire substrate in the 1990s for LED, the demand for sapphire crystal has been growing rapidly.

It drives the development of new markets like general lighting, backside lighting in TV-sets, displays, consumer appliances, aerospace and defense, and other applications

Specifications of 4inch sapphire wafer substrate carrier

Specs2 inch4 inch6 inch8inch
Dia50.8 ± 0.1 mm100 ± 0.1 mm150 ± 0.1 mm200 ± 0.1 mm
Thick430 ± 25 um650 ± 25 um1300 ± 25 um1300 ± 25 um
RaRa ≤ 0.3 nmRa ≤ 0.3nmRa ≤ 0.3nmRa ≤ 0.3 nm
TTV≤ 10um≤ 10um≤ 10um≤ 10um
Tolerance≤ 3 um≤ 3 um≤ 3 um≤ 3 um
Quality surface20/1020/1020/1020/10
Surface stateDSP SSP Grinding
ShapeCircle with notch or flatness
Chamfer45°,C Shape
MaterialAl2O3 99.999%
N/OSapphire wafer

The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" in diameter are available.

A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.

C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.

R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.

Standard wafer

2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer

Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS

2inch

DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm

/0.5mm/ 1.0mmt

SSP C-axis 0.2/0.43mm

(DSP&SSP) A-axis/M-axis/R-axis 0.43mm


3inch

DSP/ SSP C-axis 0.43mm/0.5mm


4Inch

dsp c-axis 0.4mm/ 0.5mm/1.0mm

ssp c-axis 0.5mm/0.65mm/1.0mmt


6inch

ssp c-axis 1.0mm/1.3mmm


dsp c-axis 0.65mm/ 0.8mm/1.0mmt



101.6mm 4inch Sapphire wafer sapphire Details

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Quality 4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3 for sale
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