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IXXK200N60B3

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 200 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 380 A
Pd - Power Dissipation :: 1.63 kW
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-264-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.4 V
Manufacturer :: IXYS
Description: IGBT Transistors GenX3 XPT 600V
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IXXK200N60B3

The IXXK200N60B3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

XCS05

  

XC95108

  

XPC860TZP50B3

  
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