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Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 5.7 A
Pd - Power Dissipation :: 68 W
Collector- Emitter Voltage VCEO Max :: 1.6 kV
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 4.9 V
Manufacturer :: IXYS
Description: IGBT Transistors 5 Amps 1600V
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IXBH5N160G

The IXBH5N160G,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

HEF4894BT

  

2N6287

  

K9F5608

  
Quality IXBH5N160G for sale
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