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IXXK200N60C3

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 200 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 340 A
Pd - Power Dissipation :: 1.63 kW
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-264-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.6 V
Manufacturer :: IXYS
Description: IGBT Transistors XPT 600V IGBT GenX3
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IXXK200N60C3

The IXXK200N60C3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

XCS05

  

XCS30

  

XC3S1000-4FGG676I

  
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