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HGTD7N60C3S9A

Categories IGBT Transistors
Gate-Emitter Leakage Current :: +/- 250 nA
Product Category :: IGBT Transistors
Mounting Style :: SMD/SMT
Continuous Collector Current at 25 C :: 14 A
Pd - Power Dissipation :: 60 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-252AA-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Reel
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.6 V
Manufacturer :: Fairchild Semiconductor
Description: IGBT Transistors 14a 600V N-Ch IGBT UFS Series
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HGTD7N60C3S9A

The HGTD7N60C3S9A,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

LE82Q963

  

THS1206IDA

  

N25Q128A13EF840F

  
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