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Categories IGBT Transistors
Gate-Emitter Leakage Current :: 10 uA
Product Category :: IGBT Transistors
Mounting Style :: SMD/SMT
Continuous Collector Current at 25 C :: 6 A
Pd - Power Dissipation :: 60 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-252-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Reel
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.4 V
Manufacturer :: Fairchild Semiconductor
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FGD3N60UNDF

The FGD3N60UNDF,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

BFG424F

  

MT47H64M8CF-3;F

  

HEF40193BT

  
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