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IHW40N60RF

IHW40N60RF
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 80 A
Pd - Power Dissipation :: 305 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.1 V
Manufacturer :: Infineon Technologies
Description: IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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IHW40N60RF

The IHW40N60RF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

E28F320J5

  

M29W800DB70ZE6E

  

M29W128GL70ZS6E

  
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