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2SD1899 NPN PNP Transistors Silicon Material Low Collector Saturation Voltage

Categories Electronic IC Chips
Brand Name: RENESAS
Model Number: 2SD1899
Place of Origin: JAPAN
MOQ: 10 PCS
Price: Negotiation
Payment Terms: T/T, Western Union , ESCROW
Supply Ability: 10000PCS
Delivery Time: STOCK
Packaging Details: BAG
Description: Bipolar (BJT) Transistor PNP 60 V 10 A 50 W Through Hole TO-220
Collector Current (DC): 3A
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 60V
Emitter-Base Voltage: 7V
Frequency: 120MHz
Power Dissipation: 2W
Transistor Polarity: NPN
Operating Temp Range: -55C to 150C
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2SD1899 NPN PNP Transistors Silicon Material Low Collector Saturation Voltage

2SD1899 NPN PNP Transistors Silicon NPN PowerTransistor


DESCRIPTION


·Low collector saturation voltage

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device performance and reliable operation


APPLICATIONS

·High transition frequency applications

Specifications

Category: BJT - General Purpose
Manufacturer: RENESAS TECHNOLOGY
Collector Current (DC) : 3(A)
Collector-Base Voltage: 60(V)
Collector-Emitter Voltage: 60(V)
Emitter-Base Voltage: 7(V)
Frequency: 120(MHz)
Power Dissipation: 2(W)
Mounting: Surface Mount
Operating Temp Range: -55C to 150C
Package Type: TO-252
Pin Count: 2 +Tab
Number of Elements: 1
Operating Temperature Classification: Military
Category : Bipolar Power
Rad Hardened: No
Transistor Polarity: NPN
Output Power: Not Required(W)
Configuration: Single
DC Current Gain: 60@0.2A@2V/50@2A@2V

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