BSZ067N06LS3GATMA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.2V @ 35µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:	67 nC @ 10 V
Rds On (Max) @ Id, Vgs:	6.7mOhm @ 20A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	5100 pF @ 30 V
Mounting Type:	Surface Mount
Series:	OptiMOS™
Supplier Device Package:	PG-TSDSON-8
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 20A (Tc)
Power Dissipation (Max):	2.1W (Ta), 69W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	BSZ067
Description:	MOSFET N-CH 60V 14A/20A 8TSDSON

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 14A (Ta), 20A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

Product Tags:

BSH111

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