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IRF9Z24NPBF

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Package: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Mounting Type: Through Hole
Series: HEXFET®
Supplier Device Package: TO-220AB
Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 45W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: IRF9Z24
Description: MOSFET P-CH 55V 12A TO220AB
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IRF9Z24NPBF

P-Channel 55 V 12A (Tc) 45W (Tc) Through Hole TO-220AB
Product Tags:

fgtech v54

  

PCF8593T

  

PCF8574T

  
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