STH315N10F7-6

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:	180 nC @ 10 V
Rds On (Max) @ Id, Vgs:	2.3mOhm @ 60A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	100 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	12800 pF @ 25 V
Mounting Type:	Surface Mount
Series:	Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Supplier Device Package:	H2PAK-6
Mfr:	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Power Dissipation (Max):	315W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	STH315
Description:	MOSFET N-CH 100V 180A H2PAK-6

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

Product Tags:

LE82PM965

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