STW19NM50N

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4V @ 250µA
Operating Temperature:	150°C (TJ)
Package / Case:	TO-247-3
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Rds On (Max) @ Id, Vgs:	250mOhm @ 7A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	500 V
Vgs (Max):	±25V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 50 V
Mounting Type:	Through Hole
Series:	MDmesh™ II
Supplier Device Package:	TO-247-3
Mfr:	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Power Dissipation (Max):	110W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	STW19
Description:	MOSFET N-CH 500V 14A TO247-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 500 V 14A (Tc) 110W (Tc) Through Hole TO-247-3

Product Tags:

STW20NB50

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