CSD19533Q5AT

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.4V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Rds On (Max) @ Id, Vgs:	9.4mOhm @ 13A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	100 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2670 pF @ 50 V
Mounting Type:	Surface Mount
Series:	NexFET™
Supplier Device Package:	8-VSONP (5x6)
Mfr:	Texas Instruments
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Power Dissipation (Max):	3.2W (Ta), 96W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	CSD19533
Description:	MOSFET N-CH 100V 100A 8VSON

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 100 V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6)

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CSD19533Q5A

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