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SQJ457EP-T2_GE3

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Product Status: Active
Mounting Type: Surface Mount
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Series: -
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Mfr: Vishay Siliconix
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Technology: MOSFET (Metal Oxide)
FET Feature: -
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
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SQJ457EP-T2_GE3

P-Channel 60 V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Product Tags:

K4D263238E-GC33

  

K4D26323QG-GC33

  

K4N56163QG-ZC25

  
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