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IXFN110N60P3

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 5V @ 8mA
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Package: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Mounting Type: Chassis Mount
Series: HiPerFET™, Polar3™
Supplier Device Package: SOT-227B
Mfr: IXYS
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Power Dissipation (Max): 1500W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: IXFN110
Description: MOSFET N-CH 600V 90A SOT227B
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IXFN110N60P3

N-Channel 600 V 90A (Tc) 1500W (Tc) Chassis Mount SOT-227B
Product Tags:

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