SSM6J501NU,LF

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	1V @ 1mA
Operating Temperature:	150°C (TJ)
Package / Case:	6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:	29.9 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:	15.3mOhm @ 4A, 4.5V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	20 V
Vgs (Max):	±8V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2600 pF @ 10 V
Mounting Type:	Surface Mount
Series:	U-MOSVI
Supplier Device Package:	6-UDFNB (2x2)
Mfr:	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Power Dissipation (Max):	1W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SSM6J501
Description:	MOSFET P-CH 20V 10A 6UDFNB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 20 V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)

Product Tags:

HEF4066BT.653

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