IRF1010EPBF

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4V @ 250µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	130 nC @ 10 V
Rds On (Max) @ Id, Vgs:	12mOhm @ 50A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:	3210 pF @ 25 V
Mounting Type:	Through Hole
Series:	HEXFET®
Supplier Device Package:	TO-220AB
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	84A (Tc)
Power Dissipation (Max):	200W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IRF1010
Description:	MOSFET N-CH 60V 84A TO220AB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 84A (Tc) 200W (Tc) Through Hole TO-220AB

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