IXTH80N20L

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-247-3
Gate Charge (Qg) (Max) @ Vgs:	180 nC @ 10 V
Rds On (Max) @ Id, Vgs:	32mOhm @ 40A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	200 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	6160 pF @ 25 V
Mounting Type:	Through Hole
Series:	Linear
Supplier Device Package:	TO-247 (IXTH)
Mfr:	IXYS
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Power Dissipation (Max):	520W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IXTH80
Description:	MOSFET N-CH 200V 80A TO247

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 200 V 80A (Tc) 520W (Tc) Through Hole TO-247 (IXTH)

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