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Discrete Semiconductor Devices BSS138W H6327 N-Channel 60 V 280mA 500mW Surface Mount PG-SOT323

Categories Discrete Semiconductor Devices
Brand Name: Infineon Technologies
Model Number: BSS138W H6327
Certification: ISO9001
Place of Origin: China,GuangDong,ShenZhen
MOQ: >=20pcs
Price: $5.5
Payment Terms: T/T, Western Union, D/P, D/A, , L/C
Supply Ability: 10000 Acre/Acres per Day+pcs+1-2days
Delivery Time: 2-5days
Packaging Details: Tape & Reel (TR) Cut Tape (CT) Digi-Reel
Description: MOSFET N-CH 60V 280MA SOT323-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V, 10V
FET Type: N-Channel
Product Status: Active
Base Product Number: BSS138
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Discrete Semiconductor Devices BSS138W H6327 N-Channel 60 V 280mA 500mW Surface Mount PG-SOT323

Discrete Semiconductor Devices BSS138W H6327 N-Channel 60 V 280mA 500mW Surface Mount PG-SOT323


PRODUCT DESCRIPTION


Part number BSS138W H6327 is one of the products we sell. If you need BSS138W H6327 or its related products, please provide us with the product specifications, quantity and packaging requirements. It would be better to attach product pictures, and we will give you a quotation as soon as possible.


PRODUCT PROPERTIES


Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT323
Package / Case
SC-70, SOT-323
Base Product Number
BSS138

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