| Sign In | Join Free | My futurenowinc.com |
|
| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | Infineon |
| Model Number: | BSC072N08NS5ATMA1 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80 V |
| Current - Continuous Drain (Id) @ 25°C: | 74A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 7.2mOhm @ 37A, 10V |
BSC072N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 7.2mOhm @ 37A, 10V | |
Vgs(th) (Max) @ Id | 3.8V @ 36µA | |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TDSON-8-7 | |
Package / Case |
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

|