Sign In | Join Free | My futurenowinc.com
futurenowinc.com
Products
Search by Category
Home > Lab Supplies >

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

Categories SiC Epitaxial Wafer
Brand Name: GaNova
Model Number: JDCD03-002-006
Certification: UKAS/ISO9001:2015
Place of Origin: Suzhou China
Payment Terms: T/T
Delivery Time: 3-4 week days
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name: Sic Epitaxial Wafer
Crystal form: 4H
Diameter: 150.0mm+0.0/-0.2mm
Surface orientation: {0001}±0.2°
Length of main reference edge: Notch
Length of secondary reference edge: No sub-reference edges
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices


Overview

Sized for improved production
With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.


6inch 4H-SiC Semi insulating substrate

Product performancePD
Crystal form4H
PolytypicNot allowArea≤5%
Micropipe Densitya≤0.5/cm2≤5/cm2
Six square emptyNot allowArea≤5%
Hexagon surface hybrid crystalNot allow
wrappage aArea≤0.05%N/A
Resistivity≥1E9Ω·cm≥1E5Ω·cm

(0004)XRD

Half height width of rocking curve(FWHM)


≤45 Arcsecond


N/A

Diameter150.0mm+0.0/-0.2mm
Surface orientation{0001}±0.2°
Length of main reference edgeNotch
Length of secondary reference edgeNo sub-reference edges
Notch orientation<1-100>±1°
Notch angle90° +5°/-1°
Notch degree of depthFrom the edge 1mm +0.25mm/-0mm
surface preparationC-Face: Mirror Finish, Si-Face: Chemical Mechanical Polishing (CMP)
The edge of the waferwafer edge chamfer

Surface roughness(10μm×10μm)


Si face Ra≤0.2 nm C-Face Ra≤0.5 nm


thickness

350.0μm±25.0μm


LTV(10mm×10mm)a

≤2µm


≤3µm


TTVa

≤6µm


≤10µm


Bowa

≤25µm


≤40µm


Warpa

≤40µm


≤60µm


Broken edge / gapCollapse edges of a length and a width of ≥0.5mm are not allowed≤2 and each length and width of ≤1.0mm
scratcha≤5And the total length is≤ 0.5 times the diameter≤5 ,And the total length is≤1.5 times the diameter
flawnot allow
pollutionnot allow
Edge removal

3mm

Remark: 3mm edge exclusion is used for the items marked with a.


About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.


FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Quality 150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm for sale
Send your message to this supplier
 
*From:
*To: Shanghai GaNova Electronic Information Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0