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| Categories | Discrete Semiconductor Devices |
|---|---|
| Brand Name: | Vishay General Semiconductor |
| Model Number: | V20PWM45-M3/I V20PWM45HM3/I |
| MOQ: | 1 piece |
| Payment Terms: | T/T |
| Delivery Time: | 2~8 workdays |
| Brand: | Vishay General Semiconductor |
| Certificate: | / |
| Model: | V20PWM45-M3/I V20PWM45HM3/I |
| MOQ: | 1 pc |
| Price: | Negotiated |
| Delivery: | 2~8 workdays |
| Payment: | T/T |
Product Description
V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottk
V20PWM45 V20PWM45C-My Rectifier3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products
V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier
Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier
Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A
APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These features combine to make this design an extremely
efficient and reliable device for use in a wide variety of
applications.
Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating
Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea
Category | Discrete Semiconductor Products |
Diodes - Rectifiers - Single | |
Mfr | Vishay General Semiconductor - Diodes Division |
Series | Automotive, AEC-Q101, eSMP®, TMBS® |
Package | Tape & Reel (TR) |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45 V |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 660 mV @ 20 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr | 700 µA @ 45 V |
Capacitance @ Vr, F | 3100pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | SlimDPAK |
Operating Temperature - Junction | -40°C ~ 175°C |
Base Product Number | V20PWM45 |
| Part number | V20PWM45-M3/I V20PWM45HM3/I |
| Base part number | V20PWM45C-M3/I |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
|
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