Name: IPB200N25N3G Semiconductors Discrete Transistors Original And New MOSFET
Brand: Original
Price: 1 USD

IPB200N25N3G Semiconductors Discrete Transistors Original And New MOSFET

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Walton Electronics Co., Ltd.

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Product Attribute	Attribute Value
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	64 A
Rds On - Drain-Source Resistance:	17.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	86 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	61 S
Height:	4.4 mm
Length:	10 mm
Product Type:	MOSFET
Rise Time:	20 ns
Series:	OptiMOS 3
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	OptiMOS 3 Power-Transistor
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	18 ns
Width:	9.25 mm
Part # Aliases:	SP000677896 IPB2N25N3GXT IPB200N25N3GATMA1
Unit Weight:	0.139332 oz

Product Tags:

Semiconductors Discrete Transistors

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