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| Categories | UV Photodiode Sensor |
|---|---|
| Model Number: | S12060-02 |
| Place of Origin: | China |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 1000pcs/Month |
| Delivery Time: | 5-8workingdays |
| Packaging Details: | Standard Packing |
| Brand Name: | Hamamatsu |
| Price: | Negotiable |
| Type: | Near Infrared (low temperature coefficient) |
| Light-receiving surface: | φ0.2 mm |
| package: | Metal |
| Package category: | TO-18 |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band
Features:
Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise
Applications:
Optical rangefinders
FSO
Optical fi ber communications
Datasheet:
| Maximum sensitivity wavelength (typical) | 800 nm |
| Sensitivity wavelength range | 400 to 1000 nm |
| Photosensitivity (Typical) | 0.5 A/W |
| Dark current (maximum) | 0.5 nA |
| Cutoff Frequency (Typical) | 1000 MHz |
| Junction capacitance (typical) | 1.5 pF |
| Breakdown voltage (typical) | 200 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.4 V/°C |
| Gain ratio (typical value) | 100 |

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