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2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

Categories Piezoelectric Wafer
Brand Name: BonTek
Model Number: Sapphire (Al2O3)
Certification: ISO:9001
Place of Origin: China
MOQ: 25 Pieces
Price: Negotiable
Payment Terms: T/T
Supply Ability: 10000 pieces/Month
Delivery Time: 1-4 weeks
Packaging Details: Cassette, Jar, Film package
Material: Sapphire Crystal Wafer
Cut Type: C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10]
Transmission Range: 0.17 to 5.5 microns
Refractive Index: 1.75449 (o) 1.74663 (e) at 1.06 microns
TTV: <10um
BOW: <15um
Warp: <15um
Dielectric Constant: 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
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2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

2 Inch Sapphire Crystal C Plane Polished Sapphire Wafers Sapphire Substrates


Specification:
Single crystal Al2O3 99.999%
Orientation: R-axis 0.5°

Diameter:50.8±0.1mm

Thickness :430±15um or 330±15um

Primary flat:16±1mm

OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)

Frontside Surface Roughness:Ra<0.2nm

Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra<0.2nm)

TTV:<10um BOW:-10~0um WARP:<10um

Laser Mark Series No. by needs

Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Cleanliness :Free visible contamination


1. Sapphire has a high optical transmittance, so it is widely used as microelectronic tube dielectric material, ultrasonic conduction element, waveguide laser cavity, and other optical elements, as window materials for infrared military devices, space vehicles, high-intensity lasers and optical communications.

2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so sapphire substrate is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing, and other precision manufacturing (wear resistance), coal, gas, well detection sensors and detector windows (anti-corrosion).

3. Sapphire has the characteristics of electrical insulation, transparency, good thermal conductivity, and high rigidity, so it can be used as the substrate material of integrated circuits, such as LED and microelectronic circuits, ultra-high-speed integrated circuit.



OPTICAL PROPERTIES of SAPPHIRE Al2O3

Transmission Range

0.17 to 5.5 microns

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 microns

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Index of Absorption

0.3 x 10-3 cm-1 at 2.4 microns

dN/dT

13.7 x 10-6 at 5.4 microns

dn/dm = 0

1.5 microns


PHYSICAL PROPERTIES of SAPPHIRE Al2O3

Density

3.97 g/cm3

Melting Point

2040 degrees C

Thermal Conductivity

27.21 W/(m x K) at 300 K

Thermal Expansion

5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness

Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity

419 J/(kg x K)

Dielectric Constant

11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

Young's Modulus (E)

335 GPa

Shear Modulus (G)

148.1 GPa

Bulk Modulus (K)

240 GPa

Elastic Coefficients

C11=496 C12=164 C13=115
C33=498 C44=148

Apparent Elastic Limit

275 MPa (40,000 psi)

Poisson Ratio

0.25



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