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TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV
Categories IGBT Transistor Module
Brand Name: IXYS
Model Number: IXBT14N300HV
MOQ: 50pcs
Price: Negotiable
Supply Ability: 1000000pcs
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector (Ic) (Max): 38 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Power - Max: 200 W
Input Type: Standard
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Company Info.
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT)

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of the IXBx14N300HV BiMOSFET IGBTs serve as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Using the IXBx14N300HV BiMOSFET IGBTs, power designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying associated gate drive circuitry. This feature results in a much simpler system design with a lower cost and improved reliability.

The IXYS IXBx14N300HV BiMOSFET™ IGBTs are available in TO-263HV (IXBA14N300HV) and TO-268HV (IXBT14N300HV) packages. These devices feature a -55°C to +150°C junction temperature range.




FEATURES

  • "Free" intrinsic body diode
  • Saves space by eliminating multiple series-parallel lower voltage, lower current rated devices
  • High power density
  • High-frequency operation
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • 4000V electrical isolation
  • Low gate drive requirements

APPLICATIONS

  • Switch-mode and resonant-mode power supplies
  • Uninterruptible power supplies (UPS)
  • Laser generators
  • Capacitor discharge circuits
  • AC switches

SPECIFICATIONS

  • 3000V collector-emitter voltage (VCES)
  • 3000V collector-gate voltage (VCGR)
  • ±20V gate-emitter voltage (VGES)
  • ±38A collector current at +25°C (IC25)
  • ±100nA gate leakage current (IGES)
  • ±14A collector current at +110°C (IC110)
  • 2.7V collector-emitter saturation voltage (VCE(sat))
  • 10μs short-circuit-withstand time (tsc)
  • 200W collector power dissipation (PC)
  • -55°C to +150°C junction temperature range

PIN DESIGNATIONS & SCHEMATIC

Mechanical Drawing - IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

TO-263HV PACKAGE OUTLINE

Mechanical Drawing - IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

TO-268HV PACKAGE OUTLINE

Mechanical Drawing - IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs
Product Tags:

TO-268HV IGBT Transistor Module

  

IGBT Transistor Module 200W

  

IGBT IXBT14N300HV

  
Quality TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV for sale

TO-268HV IGBT Transistor Module 3000V 38A 200W Surface Mount IXBT14N300HV

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