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| Categories | Infrared Photoelectric Sensor |
|---|---|
| Brand Name: | Hamamatsu |
| Model Number: | G8370-81 |
| Place of Origin: | Japan |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 2000pcs/Month |
| Delivery Time: | 3-5work days |
| Packaging Details: | In a box |
| Price: | Negotiable |
| photosensitive area is: | φ1.0mm |
| Number of pixels: | 1 |
| Encapsulated: | Metal |
| encapsulation type is: | TO-18 |
| Cooling mode: | Non - cooled |
| spectral response range is: | 0.9 to 1.7 μm |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Product Description:
G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss
Features:
Low PDL(polarization dependent loss)
InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.
Product features
Low PDL(polarization dependent loss)
● Low noise, low dark current
● Large photographic area
● Photosensitive area: φ1 mm
Noise equivalent power (typical value) 2×10-14 W/ hz1/2
Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted
Specifications:
| peak sensitivity wavelength (typical value) was | 1.55 μm |
| Sensitivity (typical value) | 1.1 A/W |
| Dark current (maximum) | 5 nA |
| Cutoff frequency (typical value) | 35 MHz |
| Junction capacitance (typical value) | 90 pF |
| Noise equivalent power (typical value) | 2×10-14 W/ hz1/2 |

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