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| Categories | Infrared Photoelectric Sensor |
|---|---|
| Brand Name: | Hamamatsu |
| Model Number: | S2386-5K |
| Place of Origin: | Japan |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 3000/pcs/month |
| Delivery Time: | 3-5work days |
| Packaging Details: | Tube |
| Price: | Negotiable |
| photographic area is: | 2.4 × 2.4 mm |
| Number of pixels: | 1 |
| Refrigeration: | Non - cooled |
| Encapsulated: | Metal |
| encapsulation type is: | TO-5 |
| Reverse voltage (max): | 30V |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Product Description:
S2386-5K Silicon Photodiode Sensor Infrared Photoelectric Sensor 30 V Universal Geberal Purpose Photometry
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 30 V |
| spectral response range is | 320 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.6 A/W |
| Dark current (maximum) | 5 pA |
| Rise time (typical value). | 1.8 u s |
| Junction capacitance (typical value) | 730 pF |


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