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| Categories | Transistor IC Chip |
|---|---|
| Model Number: | FDS6699S |
| Place of Origin: | America |
| Brand Name: | Fairchild |
| Packaging Details: | Original package |
| Price: | discussible |
| MOQ: | discussible |
| Payment Terms: | L/C, D/A, D/P, D/P, T/T, Western Union, MoneyGram, |
| Supply Ability: | 10000pcs one month |
| Delivery Time: | 3~7days |
| Type: | MOSFET |
| D/C: | 2021 |
| Package Type: | SOIC-8 |
| Application: | standard |
| Supplier Type: | Original manufacturer, ODM, Agency, Retailer, Other |
| Media Available: | datasheet, Photo, EDA/CAD Models, Other |
| Brand: | Mosfet |
| Voltage - Collector Emitter Breakdown (Max): | 30.0 V |
| Operating Temperature: | -55 ℃~150 ℃ |
| Mounting Type: | Surface Mount |
| Drain to Source Voltage (Vdss): | 30.0 V |
| Number of Pins: | 8 |
| Max Operating Temperature: | 150 °C |
| Element Configuration: | Single |
| Min Operating Temperature: | -55 °C |
| Rise Time: | 12 ns |
| Rds On Max: | 3.6 mΩ |
| Number of Channels: | 1 |
| RoHS: | Compliant |
| Company Info. |
| Shenzhen Res Electronics Limited |
| Verified Supplier |
| View Contact Details |
| Product List |
FDS6699S transistor MOS tube N channel SOIC-8
Products Description :
1. Product Model :FDS6699S
2. Description: MOSFET
3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V
4. High performance Trench technology for extremely low RDS (ON) and fast switching
5. High power and current handling capability
6. 100% RG (gate resistance) tested
Technological Parameters:
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