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| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | OTOMO |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | 3DD13005 |
| Collector-Base Voltage: | 700v |
| Junction Temperature: | 150 ℃ |
| Emitter-Base Voltage: | 9V |
| Product name: | semiconductor triode type |
| Collector Dissipation: | 1.25W |
| Type: | Triode Transistor |
| Company Info. |
| Beijing Silk Road Enterprise Management Services Co.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN)
Power Switching Applications
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 700 | V |
| VCEO | Collector-Emitter Voltage | 400 | V |
| VEBO | Emitter-Base Voltage | 9 | V |
| IC | Collector Current -Continuous | 1.5 | A |
| PC | Collector Dissipation | 1.25 | W |
| TJ, Tstg | Junction and Storage Temperature | -55~+150 | ℃ |
Ta=25 Š unless otherwise specified
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | Ic= 1mA,IE=0 | 700 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic= 10 mA,IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 1mA, IC=0 | 9 | V | ||
| Collector cut-off current | ICBO | VCB= 700V,IE=0 | 1 | mA | ||
| Collector cut-off current | ICEO | VCE= 400V,IB=0 | 0.5 | mA | ||
| Emitter cut-off current | IEBO | VEB= 9 V, IC=0 | 1 | mA | ||
DC current gain | hFE(1) | VCE= 5 V, IC= 0.5 A | 8 | 40 | ||
| hFE(2) | VCE= 5 V, IC= 1.5A | 5 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A,IB= 250 mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A, IB= 250mA | 1.2 | V | ||
| Base-emitter voltage | VBE | IE= 2A | 3 | V | ||
Transition frequency | fT | VCE=10V,Ic=100mA f =1MHz | 5 | MHz | ||
| Fall time | tf | IC=1A,IB1=-IB2=0.2A VCC=100V | 0.5 | µs | ||
| Storage time | ts | IC=250mA | 2 | 4 | µs |
CLASSIFICATION OF hFE1
| Rank | |||||||
| Range | 8-10 | 10-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 |
CLASSIFICATION OF tS
| Rank | A1 | A2 | B1 | B2 |
| Range | 2-2.5 (μs ) | 2.5-3(μs ) | 3-3.5(μs ) | 3.5-4 (μs ) |
TO-92 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| Φ | 0° | 8° | 0° | 8° |
| V | 5.600 REF. | 0.220 REF. | ||
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