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| Categories | Integrated Circuit Chips |
|---|---|
| Brand Name: | ST Micro electronics |
| Model Number: | STR2N2VH5 |
| Certification: | Original Part |
| Place of Origin: | Shenzhen, China |
| MOQ: | 1PCS |
| Price: | to be Negotiated |
| Payment Terms: | T/T, Western Union, Paypal, Wechat Pay |
| Supply Ability: | 1 Million pieces per Month |
| Delivery Time: | Immediate |
| Packaging Details: | SOT-23 |
| Packaging: | SOT-23 |
| Product Description: | MOSFET N-CH 20V 2.3A SOT-23 |
| Product Type: | Small Signal Field-Effect Transistors |
| Operating Temp Range: | -55C to 150C |
Electronic Components Trans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R STR2N2VH5 Integrated Circuits
Applications :
Description :
Electrical characteristics :
Technical Specifications :
| Lead Shape | Gull-wing |
| Mounting | Surface Mount |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Product Category | Power MOSFET |
| Configuration | Single Quad Drain |
| Process Technology | STripFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 0.7(Min) |
| Maximum Continuous Drain Current (A) | 2.3 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 30@4.5V |
| Typical Gate Charge @ Vgs (nC) | 4.6@4.5V |
| Typical Input Capacitance @ Vds (pF) | 367@16V |
| Maximum Power Dissipation (mW) | 350 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 14.4 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 4.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT-23 |
| Pin Count | 3 |
| Military | No |
for product datasheet, CONTACT US directly.
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