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| Categories | Electronic Integrated Circuits |
|---|---|
| Brand Name: | ON |
| Model Number: | FDS6679AZ |
| Certification: | ROHS |
| Place of Origin: | CHINA |
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 10000PCS/WEEK |
| Delivery Time: | 2-3DAYS |
| Packaging Details: | 2500PC/REEL |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 13 A |
| Rds On - Drain-Source Resistance: | 9.3 mOhms |
| Vgs - Gate-Source Voltage: | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 96 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5W |
| Height: | 1.75 mm |
| Length: | 4.9 mm |
| Transistor Type: | 1P Channel |
| Width: | 3.9 mm |
| Fall Time: | 92 ns |
| Rise Time: | 15 ns |
| Typical Turn-Off Delay Time: | 210 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Factory Pack Quantity: | 2500 |
FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced
PowerTrench process that has been especially tailored to minimize
the on-state resistance.
This device is well suited for Power Management and load switching
applications common in Notebook Computersand Portable Battery Packs
2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant
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