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N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

Categories BLDC Motor Driver IC
Brand Name: JEUNKEI
Model Number: JY11M
Certification: ISO9001,CE
Place of Origin: China
MOQ: 50pcs ( sample available)
Price: USD0.5-USD1/PC
Payment Terms: T/T, , Western Union, Paypal
Supply Ability: 1000pcs per day
Delivery Time: depend on the order quantity /Negotiable
Packaging Details: Suite for export
Name: N Channel MOSFET
Model No.: JY11M
Type: N Channel
Drain-Source Voltage: 100V (Tc=25℃)
Gate-Source Voltage: ±20V
Continuous Drain Current: 110A(Tc=25℃)
Max Power Dissipation: 210W
Operating Junction and Storage Temperature Range: -55~+175℃
Reverse body recovery: Yes
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N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits

General Description:


The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.


Features:


● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation


Applications:


● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems


PIN Description:


Absolute Maximum Ratings( Tc=25℃ Unless Otherwise Noted):


SymbolParameterLimitUnit
VDSDrain-Source Voltage100V
VGSGate-Source Voltage±20V
IDContinuous Drain CurrentTC=25℃110A
TC=100℃82
IDMPulsed Drain Current395A
PDMaximum Power Dissipation210W
TJTSTGOperating Junction and Storage Temperature Range-55~+175
RΘJCThermal Resistance-Junction to Case0.65℃/W
RθJA
Thermal Resistance-Junction to Ambient62

TO220-3 Package Outline:


SymbolmminchSymbolmminch
MinNomMaxMinNomMaxMinNomMaxMinNomMax
A4.404.574.700.1730.1800.185Øp11.401.501.600.0550.0590.063
A11.271.301.330.0500.0510.052e2.54BSC0.1BSC
A22.352.402.500.0930.0940.098e15.08BSC0.2BSC
b0.77-0.900.030-0.035H16.406.506.600.2520.2560.260
b21.23-1.360.048-0.054L12.75-13.170.502-0.519
C0.480.500.520.0190.0200.021L1--3.95--0.156
D15.4015.6015.800.6060.6140.622L22.50REF.0.098REF.
D19.009.109.200.3540.3580.362Øp3.573.603.630.1410.1420.143
DEP0.050.100.200.0020.0040.008Q2.732.802.870.1070.1100.113
E9.709.9010.100.3820.3890.398Θ1
E1-8.7--0.343-Θ2
E29.8010.0010.200.3860.940.401

For more information, please directly contact with us via email: ivanzhu@junqitradinig.com



Quality N Channel Enhancement Mode Power MOSFET JY11M For Hard Switched And High Frequency Circuits for sale
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