GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS

●The 3rd Generation
●Enhancement-Mode
●High Speed. : tf=0.30pμs (Max.)
●Low Saturation Voltage : VCE (sat)=2.7V (Max.)
●FRD included between Emitter and Collector

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